TPH3205WSBQA

Mfr.Part #
TPH3205WSBQA
Manufacturer
Transphorm
Package/Case
TO-247-3
Datasheet
Download
Description
MOSFET GAN FET 650V 35A TO247

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Manufacturer :
Transphorm
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
35 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-247-3
Packaging :
Tube
Pd - Power Dissipation :
125 W
Qg - Gate Charge :
42 nC
Qualification :
AEC-Q101
Rds On - Drain-Source Resistance :
62 mOhms
Technology :
GaN
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
650 V
Vgs - Gate-Source Voltage :
- 18 V, + 18 V
Vgs th - Gate-Source Threshold Voltage :
1.6 V
Datenblätter
TPH3205WSBQA

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