SUD19N20-90-E3

Mfr.Part #
SUD19N20-90-E3
Manufacturer
Vishay Semiconductors
Package/Case
TO-252-3
Datasheet
Download
Description
MOSFET 200V N-CH (D-S) 175 DEG.C

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Manufacturer :
Vishay Semiconductors
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
19 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
TO-252-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
136 W
Qg - Gate Charge :
34 nC
Rds On - Drain-Source Resistance :
90 mOhms
Technology :
SI
Tradename :
TrenchFET
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
200 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
4 V
Datenblätter
SUD19N20-90-E3

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