F3L11MR12W2M1B65BOMA1
- Mfr.Part #
- F3L11MR12W2M1B65BOMA1
- Manufacturer
- Infineon Technologies
- Package/Case
- Module
- Datasheet
- Download
- Description
- IGBT Modules LOW POWER EASY
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- Manufacturer :
- Infineon Technologies
- Product Category :
- IGBT Modules
- Collector- Emitter Voltage VCEO Max :
- 1.2 kV
- Collector-Emitter Saturation Voltage :
- 1.75 V
- Configuration :
- Dual
- Continuous Collector Current at 25 C :
- 50 A
- Gate-Emitter Leakage Current :
- 100 nA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Package / Case :
- Module
- Packaging :
- Tray
- Pd - Power Dissipation :
- 20 mW
- Product :
- IGBT Silicon Carbide Modules
- データシート
- F3L11MR12W2M1B65BOMA1
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