TSHG8200
- Mfr.Part #
- TSHG8200
- Manufacturer
- Vishay Semiconductors
- Package/Case
- -
- Datasheet
- Download
- Description
- Infrared Emitters - High Power 830mm T-1.75 90mW/sr,+/-18deg.
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- Manufacturer :
- Vishay Semiconductors
- Product Category :
- Infrared Emitters - High Power
- Beam Angle :
- 10 deg
- If - Forward Current :
- 100 mA
- Maximum Operating Temperature :
- + 85 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- Through Hole
- Packaging :
- Bulk
- Power Rating :
- 250 mW
- Radiant Intensity :
- 180 mW/sr
- Vf - Forward Voltage :
- 2.3 V
- Wavelength :
- 830 nm
- Datasheets
- TSHG8200
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Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| TSHG5210 | Vishay Semiconductors | 16,830 | Infrared Emitters - High Power 850nm, T-1.75 180mW/sr, +/-10deg. |
| TSHG5410 | Vishay Semiconductors | 5,460 | Infrared Emitters - High Power 850nm,T-1.75 90mW/sr,+/-18deg. |
| TSHG5510 | Vishay Semiconductors | 30 | Infrared Emitters - High Power 830nm,T-1.75 32mW/sr,+/-38deg. |
| TSHG6200 | Vishay Semiconductors | 28,026 | Infrared Emitters - High Power 850nm, T-1.75 180mW/sr, +/-10deg. |
| TSHG6210 | Vishay Semiconductors | 457 | Infrared Emitters - High Power 850nm, T-1.75 230mW/sr, +/-10deg. |
| TSHG6400 | Vishay Semiconductors | 4,104 | Infrared Emitters - High Power 850nm,T-1.75 70mW/sr,+/-22deg. |
| TSHG6410 | Vishay Semiconductors | 11,230 | Infrared Emitters - High Power 850nm, T-1.75 180mW/sr, +/-10deg. |
| TSHG8400 | Vishay Semiconductors | 5,614 | Infrared Emitters - High Power 830nm, T-1.75 700mW/sr, +/-22deg. |
