F3L11MR12W2M1B74BOMA1

Mfr.Part #
F3L11MR12W2M1B74BOMA1
Manufacturer
Infineon Technologies
Package/Case
Module
Datasheet
Download
Description
Discrete Semiconductor Modules LOW POWER EASY

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
Infineon Technologies
Product Category :
Discrete Semiconductor Modules
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
Press Fit
Package / Case :
Module
Packaging :
Tray
Product :
Power MOSFET Modules
Type :
SiC Power Module
Vf - Forward Voltage :
4.6 V
Vgs - Gate-Source Voltage :
- 10 V, + 20 V

Manufacturer related products

Catalog related products

  • Microchip Technology
    Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C
  • Infineon Technologies
    Discrete Semiconductor Modules CIPOS MAXI
  • Infineon Technologies
    Discrete Semiconductor Modules LOW POWER EASY
  • Infineon Technologies
    Discrete Semiconductor Modules THYR / DIODE MODULE DK
  • Infineon Technologies
    Discrete Semiconductor Modules THYR / DIODE MODULE DK

Related products

Part Manufacturer Stock Description
F3L100R07W2E3_B11 Infineon Technologies 50 IGBT Modules IGBT MODULES 650V 100A
F3L100R12W2H3_B11 Infineon Technologies 37 IGBT Modules LOW POWER EASY
F3L11MR12W2M1B65BOMA1 Infineon Technologies 72 IGBT Modules LOW POWER EASY
F3L11MR12W2M1PB65BPSA1 Infineon Technologies 30 IGBT Modules LOW POWER EASY
F3L150R07W2E3_B11 Infineon Technologies 44 IGBT Modules IGBT MODULES 650V 150A
F3L150R12W2H3_B11 Infineon Technologies 39 IGBT Modules LOW POWER EASY
F3L15MR12W2M1B69BOMA1 Infineon Technologies 82 Discrete Semiconductor Modules LOW POWER EASY
F3L15R12W2H3_B27 Infineon Technologies 35 IGBT Modules LOW POWER EASY