A3T21H455W23SR6

Mfr.Part #
A3T21H455W23SR6
Manufacturer
NXP Semiconductors
Package/Case
ACP-1230S-4L2S
Datasheet
Download
Description
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 87 W Avg., 30 V

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
NXP Semiconductors
Product Category :
RF MOSFET Transistors
Gain :
15 dB
Id - Continuous Drain Current :
3.6 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
SMD/SMT
Operating Frequency :
2110 MHz to 2200 MHz
Output Power :
87 W
Package / Case :
ACP-1230S-4L2S
Packaging :
Reel
Technology :
SI
Transistor Polarity :
Dual N-Channel
Vds - Drain-Source Breakdown Voltage :
- 500 mV, 65 V
Datasheets
A3T21H455W23SR6

Manufacturer related products

  • NXP Semiconductors
    IC & Component Sockets MPC5553 324-PIN BGA TO P
  • NXP Semiconductors
    IC & Component Sockets MPC5553 416-PIN BGA TO P
  • NXP Semiconductors
    IC & Component Sockets MPC5567 324-PIN BGA TO P
  • NXP Semiconductors
    Display Modules i.MX RT1050 4.3in LCD Display
  • NXP Semiconductors
    Display Modules WVGA display module for NXP i.MX and VFxxx R family evaluation platforms

Catalog related products

  • STMicroelectronics
    RF MOSFET Transistors 250 W 28/32 V RF power LDMOS transistor from HF to 1 GHz
  • STMicroelectronics
    RF MOSFET Transistors 400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
  • STMicroelectronics
    RF MOSFET Transistors 180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor
  • STMicroelectronics
    RF MOSFET Transistors 75 W, 28 V, 3.1 to 3.6 GHz RF power LDMOS transistor
  • STMicroelectronics
    RF MOSFET Transistors 150 W, 28/32 V RF power LDMOS transistor from HF to 1 GHz

Related products

Part Manufacturer Stock Description
A3T21H360W23SR6 NXP Semiconductors 30 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 56 W Avg., 28 V
A3T21H360W23SR6 NXP Semiconductors 30 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 56 W Avg., 28 V
A3T21H400W23SR6 NXP Semiconductors 30 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 71 W Avg., 28 V
A3T21H400W23SR6 NXP Semiconductors 30 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 71 W Avg., 28 V
A3T21H455W23SR6 NXP Semiconductors 30 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 87 W Avg., 30 V
A3T21H456W23SR6 NXP Semiconductors 30 RF MOSFET Transistors RF PWR LDMOS TRNSTR 2110-2200 MHz 87W30V
A3T21H456W23SR6 NXP Semiconductors 30 RF MOSFET Transistors RF PWR LDMOS TRNSTR 2110-2200 MHz 87W30V
A3T23H300W23SR6 NXP Semiconductors 191 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 63 W Avg., 30 V
A3T23H300W23SR6 NXP Semiconductors 191 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 63 W Avg., 30 V
A3T23H450W23SR6 NXP Semiconductors 203 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 87 W Avg., 30 V
A3T23H450W23SR6 NXP Semiconductors 203 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 87 W Avg., 30 V
A3T2GF30CBF-HP Zentel 638 DRAM DDR3&DDR3L 2Gb, 256Mx8, 1866 @CL13, 1.35V&1.5V, FBGA-78
A3T2GF30CBF-HPI Zentel 30 DRAM DDR3&DDR3L 2Gb, 256Mx8, 1866 @CL13, 1.35V&1.5V, FBGA-78, Ind. Temp.
A3T2GF30CBF-JR Zentel 30 DRAM DDR3 2Gb, 256Mx8, 2133 @CL14, 1.5V, FBGA-78
A3T2GF30CBF-JRI Zentel 30 DRAM DDR3 2Gb, 256Mx8, 2133 @CL14, 1.5V, FBGA-78, Ind. Temp.