- Manufacturer :
- Toshiba
- Product Category :
- Bipolar Transistors - Pre-Biased
- Collector- Emitter Voltage VCEO Max :
- 50 V
- Configuration :
- Dual
- DC Collector/Base Gain hfe Min :
- 80
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- USV-5
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 200 mW
- Transistor Polarity :
- NPN
- Datasheets
- RN1708,LF
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Catalog related products
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| RN1701,LF | Toshiba | 9,060 | Bipolar Transistors - Pre-Biased TRANSISTOR |
| RN1701JE(TE85L,F) | Toshiba | 30 | Bipolar Transistors - Pre-Biased ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz |
| RN1702,LF | Toshiba | 2,395 | Bipolar Transistors - Pre-Biased TRANSISTOR |
| RN1702JE(TE85L,F) | Toshiba | 5,707 | Bipolar Transistors - Pre-Biased Gen Trans NPN x 2 ESV, 50V, 100A |
| RN1703,LF | Toshiba | 4,215 | Bipolar Transistors - Pre-Biased TRANSISTOR |
| RN1703JE(TE85L,F) | Toshiba | 4,229 | Bipolar Transistors - Pre-Biased ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz |
| RN1704,LF | Toshiba | 3,109 | Bipolar Transistors - Pre-Biased TRANSISTOR |
| RN1705,LF | Toshiba | 3,809 | Bipolar Transistors - Pre-Biased TRANSISTOR |
| RN1705JE(TE85L,F) | Toshiba | 4,635 | Bipolar Transistors - Pre-Biased ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz |
| RN1706,LF | Toshiba | 8,430 | Bipolar Transistors - Pre-Biased TRANSISTOR |
| RN1706JE(TE85L,F) | Toshiba | 30 | Bipolar Transistors - Pre-Biased Gen Trans NPN x 2 ESV, 50V, 100A |
| RN1707,LF | Toshiba | 8,430 | Bipolar Transistors - Pre-Biased TRANSISTOR |
| RN1707JE(TE85L,F) | Toshiba | 30 | Bipolar Transistors - Pre-Biased NPN x 2 BRT SOT-553 50V |
| RN1708JE(TE85L,F) | Toshiba | 30 | Bipolar Transistors - Pre-Biased NPN x 2 BRT SOT-553 50V |
| RN1709,LF | Toshiba | 4,229 | Bipolar Transistors - Pre-Biased TRANSISTOR |
