FF225R12ME4_B11

Manufacturer :

Infineon Technologies

Product Category :

IGBT Modules

Collector- Emitter Voltage VCEO Max :

1.2 kV

Collector-Emitter Saturation Voltage :

1.85 V

Configuration :

Dual

Continuous Collector Current at 25 C :

225 A

Gate-Emitter Leakage Current :

400 nA

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 40 C

Package / Case :

152 mm x 62.5 mm x 20.5 mm

Packaging :

Tray

Pd - Power Dissipation :

1.05 kW

Product :

IGBT Silicon Modules