- Manufacturer :
- onsemi
- Product Category :
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max :
- 1.2 kV
- Collector-Emitter Saturation Voltage :
- 1.7 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 100 A
- Maximum Gate Emitter Voltage :
- 20 V
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 349 W
- Technology :
- SI
- Datasheets
- NGTB25N120FL3WG
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