BSD223P H6327
- Mfr.Part #
- BSD223P H6327
- Manufacturer
- Infineon Technologies
- Package/Case
- SOT-363-6
- Datasheet
- Download
- Description
- MOSFET P-Ch
Request A Quote(RFQ)
- * Contact Name:
- * Company:
- * E-Mail:
- * Phone:
- * Comment:
- * Captcha:
-
- Manufacturer :
- Infineon Technologies
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 390 mA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 2 Channel
- Package / Case :
- SOT-363-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 250 mW
- Qg - Gate Charge :
- 620 pC
- Rds On - Drain-Source Resistance :
- 700 mOhms, 1.27 Ohms
- Technology :
- SI
- Transistor Polarity :
- P-Channel
- Vds - Drain-Source Breakdown Voltage :
- 20 V
- Vgs - Gate-Source Voltage :
- - 12 V, + 12 V
- Vgs th - Gate-Source Threshold Voltage :
- 1.2 V
- Datasheets
- BSD223P H6327
Manufacturer related products
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
BSD214SN H6327 | Infineon Technologies | 2,553 | MOSFET SMALL SIGNAL MOSFETS |
BSD214SNH6327XTSA1 | Infineon Technologies | 12,636 | MOSFET SMALL SIGNAL MOSFETS |
BSD223PH6327 | INFINEON | 2,830 | New original |
BSD223PH6327XTSA1 | Infineon Technologies | 97,540 | MOSFET P-Ch DPAK-2 |
BSD235C H6327 | Infineon Technologies | 12,630 | MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6 |
BSD235CH6327 | INFINEON | 49,767 | New original |
BSD235CH6327XT | Infineon Technologies | 504 | MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6 |
BSD235CH6327XTSA1 | Infineon Technologies | 12,630 | MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6 |
BSD235N H6327 | Infineon Technologies | 4,617 | MOSFET N-Ch 20V 950mA SOT-363-6 |
BSD235NH6327XT | Infineon Technologies | 58,452 | MOSFET N-Ch 20V 950mA SOT-363-6 |
BSD235NH6327XTSA1 | Infineon Technologies | 1,470 | MOSFET N-Ch 20V 950mA SOT-363-6 |