IRF610PBF

Mfr.Part #
IRF610PBF
Manufacturer
Vishay Semiconductors
Package/Case
TO-220AB-3
Datasheet
Download
Description
MOSFET 200V N-CH HEXFET

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Manufacturer :
Vishay Semiconductors
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
3.3 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-220AB-3
Packaging :
Tube
Pd - Power Dissipation :
36 W
Qg - Gate Charge :
8.2 nC
Rds On - Drain-Source Resistance :
1.5 Ohms
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
200 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
4 V
Datasheets
IRF610PBF

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