MRFX035HR5
- Mfr.Part #
- MRFX035HR5
- Manufacturer
- NXP Semiconductors
- Package/Case
- NI-360H-2SB
- Datasheet
- Download
- Description
- RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 35 W CW over 1.8-512 MHz, 65 V
Request A Quote(RFQ)
- * Contact Name:
- * Company:
- * E-Mail:
- * Phone:
- * Comment:
- * Captcha:
-
- Manufacturer :
- NXP Semiconductors
- Product Category :
- RF MOSFET Transistors
- Gain :
- 24.8 dB
- Id - Continuous Drain Current :
- 100 mA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- Screw Mount
- Operating Frequency :
- 1.8 MHz to 512 MHz
- Output Power :
- 35 W
- Package / Case :
- NI-360H-2SB
- Packaging :
- Cut Tape, Reel
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 193 V
- Datasheets
- MRFX035HR5
Manufacturer related products
-
-
-
-
-
NXP SemiconductorsDisplay Modules WVGA display module for NXP i.MX and VFxxx R family evaluation platforms
Catalog related products
-
STMicroelectronicsRF MOSFET Transistors 250 W 28/32 V RF power LDMOS transistor from HF to 1 GHz
-
STMicroelectronicsRF MOSFET Transistors 400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
-
STMicroelectronicsRF MOSFET Transistors 180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor
-
STMicroelectronicsRF MOSFET Transistors 75 W, 28 V, 3.1 to 3.6 GHz RF power LDMOS transistor
-
STMicroelectronicsRF MOSFET Transistors 150 W, 28/32 V RF power LDMOS transistor from HF to 1 GHz
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
MRFX035H-2MHZ | NXP Semiconductors | 33 | Sub-GHz Development Tools MRFX035H 1.8-54 MHz Reference Circuit |
MRFX035H-30MHZ | NXP Semiconductors | 33 | Sub-GHz Development Tools MRFX035H 30-400 MHz Reference Circuit |
MRFX035HR5 | NXP Semiconductors | 109 | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 35 W CW over 1.8-512 MHz, 65 V |
MRFX1K80GNR5 | NXP Semiconductors | 75 | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V |
MRFX1K80GNR5 | NXP Semiconductors | 75 | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V |
MRFX1K80H-128MHZ | NXP Semiconductors | 33 | Sub-GHz Development Tools 3500W pulse - 2 up - 128MHz |
MRFX1K80H-175MHZ | NXP Semiconductors | 32 | Sub-GHz Development Tools MRFX1K80H-175MHZ |
MRFX1K80H-230MHZ | NXP Semiconductors | 32 | Sub-GHz Development Tools 1800W - 230MHz |
MRFX1K80H-27MHZ | NXP Semiconductors | 40 | Sub-GHz Development Tools 1800W - 27MHz |
MRFX1K80H-64MHZ | NXP Semiconductors | 35 | Sub-GHz Development Tools MRFX1K80H 64 MHz Reference Circuit |
MRFX1K80H-81MHZ | NXP Semiconductors | 32 | Sub-GHz Development Tools MRFX1K80H-81MHZ |
MRFX1K80H-88MHZ | NXP Semiconductors | 33 | Sub-GHz Development Tools 1800W - 87.5-108MHz |
MRFX1K80H-VHFDHY | NXP Semiconductors | 35 | Sub-GHz Development Tools MRFX1K80H 174-230 MHz Doherty Reference Circuit |
MRFX1K80HR5 | NXP Semiconductors | 208 | RF MOSFET Transistors 65V LDMOS Transistor |
MRFX1K80HR5 | NXP Semiconductors | 208 | RF MOSFET Transistors 65V LDMOS Transistor |